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FP4710-VB Product details
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1. FP4710-VB MOSFET Product Introduction
FP4710-VB is a high-performance single N-channel MOSFET packaged in TO247. This MOSFET has a drain-source voltage (VDS) of 100V, suitable for medium voltage applications. Its gate-source voltage (VGS) can withstand a maximum of ±20V, suitable for a wide range of driving voltages. The threshold voltage (Vth) of FP4710-VB is 1.8V, enabling it to turn on at a lower gate voltage. Using Trench technology, this MOSFET has a low on-resistance (RDS(ON)) of 18mΩ at a gate voltage of 10V, and a maximum drain current (ID) of 72A, suitable for handling high current loads.
FP4710-VB is a high-performance single N-channel MOSFET packaged in TO247. This MOSFET has a drain-source voltage (VDS) of 100V, suitable for medium voltage applications. Its gate-source voltage (VGS) can withstand a maximum of ±20V, suitable for a wide range of driving voltages. The threshold voltage (Vth) of FP4710-VB is 1.8V, enabling it to turn on at a lower gate voltage. Using Trench technology, this MOSFET has a low on-resistance (RDS(ON)) of 18mΩ at a gate voltage of 10V, and a maximum drain current (ID) of 72A, suitable for handling high current loads.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. FP4710-VB MOSFET detailed parameter description
1. **Package**: TO247
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.8V
6. **On-resistance (RDS(ON))**: 18mΩ @ VGS=10V
7. **Drain current (ID)**: 72A
8. **Technology**: Trench technology
9. **Junction temperature (Tj)**: Up to 150°C
10. **Switching speed**: Fast switching time, suitable for high-frequency applications
11. **Input capacitance (Ciss)**: Moderate, in line with the requirements of efficient switching
12. **Drain-source diode reverse recovery time (trr)**: Low reverse recovery time effectively reduces switching losses
1. **Package**: TO247
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.8V
6. **On-resistance (RDS(ON))**: 18mΩ @ VGS=10V
7. **Drain current (ID)**: 72A
8. **Technology**: Trench technology
9. **Junction temperature (Tj)**: Up to 150°C
10. **Switching speed**: Fast switching time, suitable for high-frequency applications
11. **Input capacitance (Ciss)**: Moderate, in line with the requirements of efficient switching
12. **Drain-source diode reverse recovery time (trr)**: Low reverse recovery time effectively reduces switching losses
Domain and module applications：
3. FP4710-VB MOSFET application areas and module examples
1. **Switching mode power supply (SMPS)**:
- FP4710-VB is very suitable for use in switch mode power supplies. Its low on-resistance and high current carrying capacity enable it to provide efficient performance during power conversion, reduce power loss, and improve overall power efficiency.
2. **Motor driver**:
- In motor drive modules, this MOSFET can efficiently handle large currents and is suitable for motor control and drive systems. Its low on-resistance helps improve the efficiency of motor drives and ensure smooth operation of motors.
3. **DC-DC converter**:
- FP4710-VB performs well in DC-DC converters. Its low on-resistance and fast switching characteristics enable it to efficiently convert voltages and provide stable outputs, making it suitable for efficient power management and power conversion modules.
4. **Inverter**:
- In inverter applications, the FP4710-VB is capable of handling 100V and 72A, making it suitable for medium-power inverters such as photovoltaic inverters or industrial inverters. Its excellent switching performance and low on-resistance improve the overall efficiency of the inverter.
With its high current handling capability, low on-resistance and moderate voltage range, the FP4710-VB is well suited for applications that require high efficiency and high power handling.
1. **Switching mode power supply (SMPS)**:
- FP4710-VB is very suitable for use in switch mode power supplies. Its low on-resistance and high current carrying capacity enable it to provide efficient performance during power conversion, reduce power loss, and improve overall power efficiency.
2. **Motor driver**:
- In motor drive modules, this MOSFET can efficiently handle large currents and is suitable for motor control and drive systems. Its low on-resistance helps improve the efficiency of motor drives and ensure smooth operation of motors.
3. **DC-DC converter**:
- FP4710-VB performs well in DC-DC converters. Its low on-resistance and fast switching characteristics enable it to efficiently convert voltages and provide stable outputs, making it suitable for efficient power management and power conversion modules.
4. **Inverter**:
- In inverter applications, the FP4710-VB is capable of handling 100V and 72A, making it suitable for medium-power inverters such as photovoltaic inverters or industrial inverters. Its excellent switching performance and low on-resistance improve the overall efficiency of the inverter.
With its high current handling capability, low on-resistance and moderate voltage range, the FP4710-VB is well suited for applications that require high efficiency and high power handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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