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DMP2035UTS-VB Product details
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DMP2035UTS-VB Product Introduction
The DMP2035UTS-VB is a high-performance P-channel MOSFET packaged in TSSOP8. It uses Trench technology and is suitable for applications that require high current and low on-resistance. This MOSFET has a maximum drain-source voltage (VDS) of -20V and a maximum gate-source voltage (VGS) of ±20V, and is designed to handle larger load currents. Its low on-resistance and high drain current capability make it an excellent performer in power switching and load control applications.
The DMP2035UTS-VB is a high-performance P-channel MOSFET packaged in TSSOP8. It uses Trench technology and is suitable for applications that require high current and low on-resistance. This MOSFET has a maximum drain-source voltage (VDS) of -20V and a maximum gate-source voltage (VGS) of ±20V, and is designed to handle larger load currents. Its low on-resistance and high drain current capability make it an excellent performer in power switching and load control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | 13mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
Detailed parameter description
- **Package**: TSSOP8
- **Configuration**: Dual P-channel
- **Maximum drain-source voltage (VDS)**: -20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.2V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 4.5V
- 13mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -7.5A
- **Technology**: Trench
- **Package**: TSSOP8
- **Configuration**: Dual P-channel
- **Maximum drain-source voltage (VDS)**: -20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.2V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 4.5V
- 13mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -7.5A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Management**:
The high current capability (-7.5A) and low on-resistance (13mΩ @ VGS = 10V) of the DMP2035UTS-VB make it ideal for switching applications in power management systems. For example, it can be used in power switches or power switching circuits to help improve system efficiency and reduce power losses.
2. **Load Switch**:
In applications that require high current load switching, such as power tools or home appliances, the DMP2035UTS-VB provides stable switching performance. Its dual P-channel configuration enables efficient control of load switching, making it suitable for use in applications with larger current loads.
3. **DC-DC Converter**:
This MOSFET is suitable for high-side switching in DC-DC converters. Its low RDS(ON) and high drain current capability ensure effective switching control in high current applications, improving the overall efficiency and stability of the converter.
4. **Consumer Electronic Devices**:
The small package and high current handling capability of the DMP2035UTS-VB make it an ideal choice in various consumer electronic devices, such as smartphones, tablets, or portable devices. It can be used in applications such as power management and load switching to help improve device performance and reliability.
The high current carrying capability, low on-resistance, and small package of the DMP2035UTS-VB make it excellent in applications such as power management, load switching, DC-DC converters, and consumer electronic devices, providing a reliable solution for a variety of needs.
1. **Power Management**:
The high current capability (-7.5A) and low on-resistance (13mΩ @ VGS = 10V) of the DMP2035UTS-VB make it ideal for switching applications in power management systems. For example, it can be used in power switches or power switching circuits to help improve system efficiency and reduce power losses.
2. **Load Switch**:
In applications that require high current load switching, such as power tools or home appliances, the DMP2035UTS-VB provides stable switching performance. Its dual P-channel configuration enables efficient control of load switching, making it suitable for use in applications with larger current loads.
3. **DC-DC Converter**:
This MOSFET is suitable for high-side switching in DC-DC converters. Its low RDS(ON) and high drain current capability ensure effective switching control in high current applications, improving the overall efficiency and stability of the converter.
4. **Consumer Electronic Devices**:
The small package and high current handling capability of the DMP2035UTS-VB make it an ideal choice in various consumer electronic devices, such as smartphones, tablets, or portable devices. It can be used in applications such as power management and load switching to help improve device performance and reliability.
The high current carrying capability, low on-resistance, and small package of the DMP2035UTS-VB make it excellent in applications such as power management, load switching, DC-DC converters, and consumer electronic devices, providing a reliable solution for a variety of needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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