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CED830G-VB Product details
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Product Introduction
**CED830G-VB** is a high voltage N-channel MOSFET in TO251 package, manufactured using SJ Multi-EPI technology. The MOSFET has a maximum drain-source voltage (VDS) of 650V and a maximum gate-source voltage (VGS) of ±30V. Its gate threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 950mΩ at VGS of 10V, and the maximum drain current (ID) is 5A. The CED830G-VB MOSFET is suitable for high voltage applications, providing high reliability and efficiency, and is an ideal choice for various high voltage circuit designs.
**CED830G-VB** is a high voltage N-channel MOSFET in TO251 package, manufactured using SJ Multi-EPI technology. The MOSFET has a maximum drain-source voltage (VDS) of 650V and a maximum gate-source voltage (VGS) of ±30V. Its gate threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 950mΩ at VGS of 10V, and the maximum drain current (ID) is 5A. The CED830G-VB MOSFET is suitable for high voltage applications, providing high reliability and efficiency, and is an ideal choice for various high voltage circuit designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: CED830G-VB
- **Package**: TO251
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 950mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ Multi-EPI
- **Model**: CED830G-VB
- **Package**: TO251
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 950mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ Multi-EPI
Domain and module applications：
Applications and modules
**CED830G-VB** MOSFET performs well in the following areas and modules, with specific applications as follows:
1. **High-voltage power switch**:
- In high-voltage power management systems, CED830G-VB MOSFET can be used for high-voltage power switches and load switching.
- Suitable for high-voltage DC-DC converters, switching power modules, and power protection circuits, it can effectively improve the power conversion efficiency and stability of the system.
2. **Inverter**:
- In inverter applications, CED830G-VB MOSFET is suitable for high-voltage inverter systems, such as solar inverters and wind inverters.
- Its high voltage capability and reliability help improve the energy efficiency and reliability of inverter systems.
3. **Industrial equipment**:
- In power control of industrial equipment, CED830G-VB can be used for switch control and current regulation of high-voltage loads.
- Suitable for industrial automation systems, relay drives, and high-power control modules to enhance system stability and performance.
4. **Lighting systems**:
- In high-voltage lighting systems, CED830G-VB MOSFET can be used to control high-voltage LED drive circuits.
- Suitable for street lighting, industrial lighting, and other high-voltage lighting systems, providing efficient current control and system protection.
5. **Motor drives**:
- In high-voltage motor drive systems, this MOSFET is used for motor control and regulation under high voltage.
- Suitable for high-voltage motor drive modules in power tools and home appliances, providing stable switching control and efficient current management.
These application examples show that CED830G-VB MOSFET has a wide range of applicability in high-voltage environments, providing efficient and reliable solutions for high-voltage power switches, inverters, industrial equipment, lighting systems, and motor drives.
**CED830G-VB** MOSFET performs well in the following areas and modules, with specific applications as follows:
1. **High-voltage power switch**:
- In high-voltage power management systems, CED830G-VB MOSFET can be used for high-voltage power switches and load switching.
- Suitable for high-voltage DC-DC converters, switching power modules, and power protection circuits, it can effectively improve the power conversion efficiency and stability of the system.
2. **Inverter**:
- In inverter applications, CED830G-VB MOSFET is suitable for high-voltage inverter systems, such as solar inverters and wind inverters.
- Its high voltage capability and reliability help improve the energy efficiency and reliability of inverter systems.
3. **Industrial equipment**:
- In power control of industrial equipment, CED830G-VB can be used for switch control and current regulation of high-voltage loads.
- Suitable for industrial automation systems, relay drives, and high-power control modules to enhance system stability and performance.
4. **Lighting systems**:
- In high-voltage lighting systems, CED830G-VB MOSFET can be used to control high-voltage LED drive circuits.
- Suitable for street lighting, industrial lighting, and other high-voltage lighting systems, providing efficient current control and system protection.
5. **Motor drives**:
- In high-voltage motor drive systems, this MOSFET is used for motor control and regulation under high voltage.
- Suitable for high-voltage motor drive modules in power tools and home appliances, providing stable switching control and efficient current management.
These application examples show that CED830G-VB MOSFET has a wide range of applicability in high-voltage environments, providing efficient and reliable solutions for high-voltage power switches, inverters, industrial equipment, lighting systems, and motor drives.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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