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BUK962R8-60E-VB Product details
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BUK962R8-60E-VB MOSFET Product Introduction
**BUK962R8-60E-VB** is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. It uses Trench technology, with ultra-low on-resistance and extremely high drain current handling capability. This MOSFET performs well in switching power supplies, motor drives, and power management, and its excellent electrical characteristics ensure high efficiency and reliability of the system.
**BUK962R8-60E-VB** is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. It uses Trench technology, with ultra-low on-resistance and extremely high drain current handling capability. This MOSFET performs well in switching power supplies, motor drives, and power management, and its excellent electrical characteristics ensure high efficiency and reliability of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 3.2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 3.2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples: 1. Switching Power Supplies: In switching power supply applications, the BUK962R8-60E-VB MOSFET significantly improves power conversion efficiency with its ultra-low on-resistance and high current handling capability. Its low power consumption reduces heat generation and is suitable for high-power power modules, ensuring system stability and efficiency, and can handle high current loads without performance degradation. 2. DC-DC Converters: This MOSFET excels in DC-DC converters, providing high current and low RDS(ON), making it suitable for battery-powered systems and high-performance power management modules. Its high current handling capability and low on-resistance make it an ideal choice for efficient voltage conversion and current management, ensuring the stability and efficiency of the power system.
3. **Motor Drives**:
The high current carrying capacity and ultra-low on-resistance of the BUK962R8-60E-VB make it particularly suitable for motor drive applications. It can effectively drive high-power motors and handle high current loads, ensuring stable operation of motors under high load conditions and improving the performance and reliability of motor drive systems.
4. **Power Amplifiers**:
In power amplifier circuits, this MOSFET can handle high-power signals, and its low on-resistance reduces power losses. It is suitable for broadcast, communication and other high-power amplification applications, improving the overall performance and efficiency of the system and ensuring efficient operation of the power amplifier.
5. **Power Management**:
As an important component in power management systems, the BUK962R8-60E-VB MOSFET can be effectively used for power switching, power distribution and battery management. Its excellent switching performance and low power consumption characteristics optimize the efficiency and stability of the power system and are suitable for power management designs that require high current and high power handling.
These application examples demonstrate the advantages of BUK962R8-60E-VB MOSFET in high current, high power and high efficiency applications, making it play an important role in modern electronic systems.
3. **Motor Drives**:
The high current carrying capacity and ultra-low on-resistance of the BUK962R8-60E-VB make it particularly suitable for motor drive applications. It can effectively drive high-power motors and handle high current loads, ensuring stable operation of motors under high load conditions and improving the performance and reliability of motor drive systems.
4. **Power Amplifiers**:
In power amplifier circuits, this MOSFET can handle high-power signals, and its low on-resistance reduces power losses. It is suitable for broadcast, communication and other high-power amplification applications, improving the overall performance and efficiency of the system and ensuring efficient operation of the power amplifier.
5. **Power Management**:
As an important component in power management systems, the BUK962R8-60E-VB MOSFET can be effectively used for power switching, power distribution and battery management. Its excellent switching performance and low power consumption characteristics optimize the efficiency and stability of the power system and are suitable for power management designs that require high current and high power handling.
These application examples demonstrate the advantages of BUK962R8-60E-VB MOSFET in high current, high power and high efficiency applications, making it play an important role in modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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