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AM6923P-T1-PF-VB Product details
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Product Introduction
**Model: AM6923P-T1-PF-VB**
AM6923P-T1-PF-VB is a dual P+P-channel power MOSFET in TSSOP8 package, with high efficiency and low on-resistance, suitable for applications that need to handle loads. This type of MOSFET is manufactured using advanced Trench technology, which can provide excellent conduction performance and reliable switching characteristics at lower gate drive voltages.
**Model: AM6923P-T1-PF-VB**
AM6923P-T1-PF-VB is a dual P+P-channel power MOSFET in TSSOP8 package, with high efficiency and low on-resistance, suitable for applications that need to handle loads. This type of MOSFET is manufactured using advanced Trench technology, which can provide excellent conduction performance and reliable switching characteristics at lower gate drive voltages.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | 18(mΩ) | 13(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
Detailed parameter description
- **Package type**: TSSOP8
- **Configuration**: Dual P+P- Channel
- **Drain-source voltage (VDS)**: -20V (negative)
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.2V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 4.5V
- 13mΩ @ VGS = 10V
- **Drain current (ID)**: -7.5A (negative)
- **Technology**: Trench
- **Package type**: TSSOP8
- **Configuration**: Dual P+P- Channel
- **Drain-source voltage (VDS)**: -20V (negative)
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.2V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 4.5V
- 13mΩ @ VGS = 10V
- **Drain current (ID)**: -7.5A (negative)
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Switch**:
The AM6923P-T1-PF-VB can be used as a power management switch, especially for circuits that require load switching and reverse voltage protection. Its negative drain current and low on-resistance characteristics are very useful in battery management systems, chargers, and inverters.
2. **Current Sense and Protection**:
In current sense and protection circuits, the AM6923P-T1-PF-VB can be used as a switching device for fast response and effective circuit protection. Its high efficiency and low voltage drop characteristics ensure reliable operation of the system under abnormal current conditions.
3. **Signal Processing**:
This MOSFET can be used for switching and regulation functions in signal processing circuits. In audio amplifiers, communication equipment, and sensor interfaces, the AM6923P-T1-PF-VB provides stable signal transmission and low-distortion amplification.
4. **Automotive electronics**:
In automotive electronic systems, AM6923P-T1-PF-VB can be used for reverse voltage protection and battery management systems. Its negative drain current capability and high efficiency make it an ideal choice for automotive electronic design.
In summary, AM6923P-T1-PF-VB is a versatile dual P+P-channel power MOSFET suitable for a variety of load switching, current protection and signal processing applications, which can improve system performance and stability.
1. **Power Switch**:
The AM6923P-T1-PF-VB can be used as a power management switch, especially for circuits that require load switching and reverse voltage protection. Its negative drain current and low on-resistance characteristics are very useful in battery management systems, chargers, and inverters.
2. **Current Sense and Protection**:
In current sense and protection circuits, the AM6923P-T1-PF-VB can be used as a switching device for fast response and effective circuit protection. Its high efficiency and low voltage drop characteristics ensure reliable operation of the system under abnormal current conditions.
3. **Signal Processing**:
This MOSFET can be used for switching and regulation functions in signal processing circuits. In audio amplifiers, communication equipment, and sensor interfaces, the AM6923P-T1-PF-VB provides stable signal transmission and low-distortion amplification.
4. **Automotive electronics**:
In automotive electronic systems, AM6923P-T1-PF-VB can be used for reverse voltage protection and battery management systems. Its negative drain current capability and high efficiency make it an ideal choice for automotive electronic design.
In summary, AM6923P-T1-PF-VB is a versatile dual P+P-channel power MOSFET suitable for a variety of load switching, current protection and signal processing applications, which can improve system performance and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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