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99T03GJ-VB Product details
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Product Introduction Details
**99T03GJ-VB MOSFET**
99T03GJ-VB is a high-performance single N-channel MOSFET in TO-251 package with ultra-low on-resistance and high current handling capability, suitable for power management and switching applications requiring high power density and high efficiency. Using advanced trench technology, extremely low on-resistance is achieved at low gate voltage, thereby improving system efficiency and reducing power consumption.
**99T03GJ-VB MOSFET**
99T03GJ-VB is a high-performance single N-channel MOSFET in TO-251 package with ultra-low on-resistance and high current handling capability, suitable for power management and switching applications requiring high power density and high efficiency. Using advanced trench technology, extremely low on-resistance is achieved at low gate voltage, thereby improving system efficiency and reducing power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 120A | 3(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO-251
- **Transistor configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology type**: Trench technology
- **Package type**: TO-251
- **Transistor configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology type**: Trench technology
Domain and module applications：
Application fields and module examples
**Electric vehicle motor drive**:
The ultra-low on-resistance and high current carrying capacity of 99T03GJ-VB make it very suitable for motor drives in electric vehicles. In electric vehicles, high-efficiency power switching devices are required to ensure the stability and efficiency of power output, which is exactly where 99T03GJ-VB excels.
**Server power supply unit**:
In data centers and server equipment, 99T03GJ-VB can be used for high power density and high-efficiency power management units. Its low on-resistance and high current handling capacity ensure stability and reliability under high load and high frequency operating conditions, helping to reduce energy consumption and operating costs in data centers.
**Industrial automation equipment**:
In power modules for industrial automation equipment, 99T03GJ-VB can provide reliable power switching and overload protection functions. Its high current carrying capacity and advanced trench technology enable it to adapt to high power requirements in various industrial environments, such as robots, PLC controllers, and automated sensor systems.
**Consumer Electronics**:
In high-performance consumer electronics, such as gaming devices and high-definition video displays, the excellent characteristics of 99T03GJ-VB can support the high-speed response and stable operation of the device, while helping to reduce battery consumption and heat emissions.
In summary, 99T03GJ-VB MOSFET, due to its ultra-low on-resistance and high current carrying capacity, can play an important role in various electronic devices and systems that require high power density and high efficiency, providing advanced power solutions for modern electronic technology.
**Electric vehicle motor drive**:
The ultra-low on-resistance and high current carrying capacity of 99T03GJ-VB make it very suitable for motor drives in electric vehicles. In electric vehicles, high-efficiency power switching devices are required to ensure the stability and efficiency of power output, which is exactly where 99T03GJ-VB excels.
**Server power supply unit**:
In data centers and server equipment, 99T03GJ-VB can be used for high power density and high-efficiency power management units. Its low on-resistance and high current handling capacity ensure stability and reliability under high load and high frequency operating conditions, helping to reduce energy consumption and operating costs in data centers.
**Industrial automation equipment**:
In power modules for industrial automation equipment, 99T03GJ-VB can provide reliable power switching and overload protection functions. Its high current carrying capacity and advanced trench technology enable it to adapt to high power requirements in various industrial environments, such as robots, PLC controllers, and automated sensor systems.
**Consumer Electronics**:
In high-performance consumer electronics, such as gaming devices and high-definition video displays, the excellent characteristics of 99T03GJ-VB can support the high-speed response and stable operation of the device, while helping to reduce battery consumption and heat emissions.
In summary, 99T03GJ-VB MOSFET, due to its ultra-low on-resistance and high current carrying capacity, can play an important role in various electronic devices and systems that require high power density and high efficiency, providing advanced power solutions for modern electronic technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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