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2SK2606-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
2SK2606-VB is a single N-channel MOSFET produced by VBsemi in TO3P package. This MOSFET is designed for high voltage applications, with a drain-source voltage of 900V and a continuous drain current capability of 9A, suitable for operation under high voltage and medium current conditions. Its maximum gate voltage is ±30V, and it has an RDS(ON) of 750mΩ (at VGS=10V). This device is manufactured based on multi-epitaxial transistor (SJ_Multi-EPI) technology to ensure its reliability and performance in various application environments.
2SK2606-VB is a single N-channel MOSFET produced by VBsemi in TO3P package. This MOSFET is designed for high voltage applications, with a drain-source voltage of 900V and a continuous drain current capability of 9A, suitable for operation under high voltage and medium current conditions. Its maximum gate voltage is ±30V, and it has an RDS(ON) of 750mΩ (at VGS=10V). This device is manufactured based on multi-epitaxial transistor (SJ_Multi-EPI) technology to ensure its reliability and performance in various application environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 9A
- **Technology**: Multi-epitaxial transistor (SJ_Multi-EPI)
Domain and module applications：
### Applications and Modules
2SK2606-VB MOSFET has a wide range of applications in many fields. Here are some typical application scenarios:
1. **Power supply**: This MOSFET is suitable for power management modules such as high-voltage switching power supplies, inverters and DC-DC converters. Its high drain-source voltage and moderate current carrying capacity make it an ideal choice for the power supply field.
2. **Motor drive**: In the industrial and automotive fields, 2SK2606-VB MOSFET can be used to drive high-voltage motors and control current. Its high voltage handling capability and moderate on-resistance make it an ideal choice for these fields.
3. **Electric vehicle charging pile**: This MOSFET is also suitable for electric vehicle charging piles to control current and manage voltage. Its high drain-source voltage and moderate current carrying capacity make it an ideal choice for electric vehicle charging piles.
4. **Solar Inverter**: In solar inverters, this MOSFET can be used to convert the DC power generated by solar panels into AC power. Its high voltage and moderate current handling capabilities are suitable for the needs of solar inverters.
5. **Industrial Automation**: In the field of industrial automation, 2SK2606-VB MOSFET can be used for high-voltage switches and control modules, such as robot control, PLC systems, etc.
Through these application examples, it can be seen that 2SK2606-VB MOSFET has important application prospects in high voltage and medium power applications, which can meet the needs of various industrial and consumer electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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