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2SK2101-01MR-VB Product details
Back to previous pageProduct introduction：
### 1. Product introduction of 2SK2101-01MR-VB model
2SK2101-01MR-VB is a single-channel N-type power MOSFET, using SJ_Multi-EPI technology, with high voltage, high performance and high reliability. Its package is TO220F, suitable for power control and switching applications in various environments.
2SK2101-01MR-VB is a single-channel N-type power MOSFET, using SJ_Multi-EPI technology, with high voltage, high performance and high reliability. Its package is TO220F, suitable for power control and switching applications in various environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 2. Detailed parameter description of 2SK2101-01MR-VB model
- **Package: ** TO220F
- **Configuration: ** Single N-Channel
- **Drain-Source Voltage (VDS): ** 800V
- **Gate-Source Voltage (VGS): ** ±30V
- **Threshold Voltage (Vth): ** 3.5V
- **On-Resistance (RDS(ON)): ** 1100mΩ @ VGS=10V
- **Drain Current (ID): ** 5A
- **Technology: ** SJ_Multi-EPI
- **Package: ** TO220F
- **Configuration: ** Single N-Channel
- **Drain-Source Voltage (VDS): ** 800V
- **Gate-Source Voltage (VGS): ** ±30V
- **Threshold Voltage (Vth): ** 3.5V
- **On-Resistance (RDS(ON)): ** 1100mΩ @ VGS=10V
- **Drain Current (ID): ** 5A
- **Technology: ** SJ_Multi-EPI
Domain and module applications：
### III. Application fields and module examples
2SK2101-01MR-VB power MOSFET is suitable for the following fields and modules:
1. **Industrial power supply:** In industrial power supply system, 2SK2101-01MR-VB can be used for high-voltage switching power supply, such as high-voltage DC/DC converter, motor controller, etc., to achieve efficient power conversion.
2. **Solar inverter:** In solar power generation system, 2SK2101-01MR-VB can be used in inverter module to convert DC power generated by solar panels into AC power for home or industrial use.
3. **Medical equipment:** This device is suitable for power switch in medical equipment, such as X-ray generator, electron microscope, etc., to ensure stable operation and efficient operation of the equipment.
4. **Electric vehicle charging piles:** 2SK2101-01MR-VB can be used as a power switch in electric vehicle charging piles to achieve a fast and safe charging process.
5. **UPS system:** This MOSFET is suitable for uninterruptible power supply systems (UPS), which can provide efficient and stable power conversion and backup power support.
6. **High-voltage lighting system:** In high-voltage lighting systems, 2SK2101-01MR-VB can be used as a power switch, such as street lighting, building lighting, etc., to provide reliable lighting solutions.
In summary, 2SK2101-01MR-VB has a wide range of applications, especially for power control and switching applications that require high voltage, high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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