VBP185R07 Product details
Product introduction:
The VBP185R07 is a VBsemi brand single-channel N-channel power MOSFET with a drain-source voltage (VDS) of 850V, a drain current (ID) of 7A, and a threshold voltage (Vth) of 3.5V. It adopts Plannar technology and is packaged as TO247. This product is suitable for high-voltage and high-power application scenarios and has low on-resistance and high drain current tolerance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 850V | 30(±V) | 3.5V | 7A | 1700 (mΩ) | Plannar |
- Product model: VBP185R07
- Brand: VBsemi
- Type: Single channel N-channel power MOSFET
- Maximum drain-source voltage (VDS): 850V
- Gate-source voltage (VGS) range: ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 1700
- Maximum drain current (ID): 7A
- Technology: Plannar
-Package:TO247
Domain and module applications:
1. Industrial power supply system: VBP185R07 can be used as a switching power supply module in industrial power supply systems to provide stable high-voltage power output.
2. Solar inverter: In solar inverter, high-performance power switching devices are required to realize the conversion and output of solar energy. VBP185R07 can be used as a key component of the inverter module.
3. Electric vehicle charging piles: VBP185R07 can be used in electric vehicle charging piles to achieve high-voltage and high-power charging control of electric vehicles.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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