Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
850V |
30（±V） |
3.5V |
7A |
|
|
1700 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBP185R07
- Brand: VBsemi
- Type: Single channel N-channel power MOSFET
- Maximum drain-source voltage (VDS): 850V
- Gate-source voltage (VGS) range: ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 1700
- Maximum drain current (ID): 7A
- Technology: Plannar
-Package:TO247
Domain and module applications：
Examples of application areas:
1. Industrial power supply system: VBP185R07 can be used as a switching power supply module in industrial power supply systems to provide stable high-voltage power output.
2. Solar inverter: In solar inverter, high-performance power switching devices are required to realize the conversion and output of solar energy. VBP185R07 can be used as a key component of the inverter module.
3. Electric vehicle charging piles: VBP185R07 can be used in electric vehicle charging piles to achieve high-voltage and high-power charging control of electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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