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2SJ660-VB Product details
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### Product Introduction
**Model: 2SJ660-VB**
2SJ660-VB is a single P-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-263 package. This product has high drain current and low on-resistance, suitable for applications requiring high efficiency and medium power. It uses Trench technology and has good electrical characteristics and reliability.
**Model: 2SJ660-VB**
2SJ660-VB is a single P-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-263 package. This product has high drain current and low on-resistance, suitable for applications requiring high efficiency and medium power. It uses Trench technology and has good electrical characteristics and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -60V | -1.7V | -35A | 60mΩ | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel |
### Detailed parameter description
- **Package:** TO-263
- **Configuration:** Single P-channel
- **Drain-source voltage (VDS):** -60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -1.7V
- **On-resistance (RDS(ON)):**
- 60mΩ @ VGS=4.5V
- 48mΩ @ VGS=10V
- **Drain current (ID):** -35A
- **Technology:** Trench
Domain and module applications：
### Application fields and module examples
**1. Power management module: **
2SJ660-VB is suitable for medium-power power management modules, such as industrial control power supply and server power supply. Its low on-resistance and high drain current characteristics can provide high efficiency and reliability.
**2. Electric vehicle charging pile: **
In electric vehicle charging pile, this MOSFET can be used for power switch and current regulator. Its high drain current and low on-resistance help improve charging efficiency and reliability.
**3. Industrial control system: **
2SJ660-VB can be applied to motor control modules in industrial control systems. Its high drain current and low on-resistance can improve the efficiency and response speed of equipment.
**4. Communication equipment: **
This model is suitable for power amplifiers and power regulators in communication equipment. Its excellent electrical characteristics and reliability enable it to meet the requirements of communication equipment for high efficiency and stability.
The above application examples demonstrate the wide applicability of 2SJ660-VB MOSFET in a variety of scenarios with medium power and high efficiency requirements, reflecting its important position in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
