2SJ649-VB Product details
Product introduction:
**Introduction: **
2SJ649-VB is a P-Channel MOSFET designed by VBsemi, suitable for various applications requiring high-efficiency power management. Using Trench technology, it has low on-resistance and high current carrying capacity, making it an ideal choice for applications with high performance requirements.
**Features:**
- **Drain-Source Voltage (VDS):** -60V
- **Gate-Source Voltage (VGS):** ±20V
- **Threshold Voltage (Vth):** -1.7V
- **On-Resistance (RDS(ON)):** 60mΩ @ VGS = 4.5V, 50mΩ @ VGS = 10V
- **Continuous Drain Current (ID):** -30A
- **Technology:** Channel
- **Package:** TO220F
- **Configuration:** Single P-Channel
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel | -60V | -1.7V | -30A | 60mΩ | 50mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel |
### Detailed Specifications
1. **Electrical Characteristics:**
- **Maximum Drain-Source Voltage (VDS):** -60V
- **Maximum Gate-Source Voltage (VGS):** ±20V
- **Threshold Voltage (Vth):** -1.7V
- **On-Resistance (RDS(ON)):**
- 60mΩ @ VGS = 4.5V
- 50mΩ @ VGS = 10V
- **Continuous Drain Current (ID):** -30A
2. **Thermal and Mechanical Characteristics:**
- **Package Type:** TO220F
- **Junction-to-Ambient Thermal Resistance:** Thermal resistance of standard TO220F package
- **Maximum Junction Temperature (Tj):** Specified by manufacturer
3. **Performance Characteristics:**
- **Technology:** Channel
- **Gate Charge (Qg): **Typical value based on VGS and ID
- **Input Capacitance (Ciss): **Typical value for high frequency operation
Domain and module applications:
### Application Examples
1. **Power Management:**
2SJ649-VB is ideal for power management systems in consumer electronics. Its high current carrying capability and low on-resistance make it suitable for DC-DC converters, providing efficient power regulation and minimizing energy loss.
2. **Battery Protection:**
In battery protection circuits, 2SJ649-VB can be used for charge and discharge control. Its high current carrying capability and low on-resistance help improve the efficiency and performance of battery systems.
3. **Power Tools:**
Due to its high current carrying capability and stable performance, 2SJ649-VB can be used for power management and drivers in power tools, ensuring high efficiency and long life of the tools.
4. **Industrial Control:**
2SJ649-VB can be used for power management and drivers in industrial control systems. Its stable performance and high reliability make it an ideal choice for industrial environments.
In summary, VBsemi's 2SJ649-VB MOSFET is a versatile and high-performance component suitable for a wide range of applications, including power management, battery protection, power tools and industrial control systems. Its advanced channel technology and robust specifications make it an ideal choice for harsh environments.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image