VBMB165R09S Product details
Product introduction:
VBMB165R09S is a single N-type field effect transistor produced by the VBsemi brand. It uses SJ_Multi-EPI technology and is packaged as TO220F. The product has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 9A. This model of product is suitable for a variety of fields and modules, with high performance and reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 30(±V) | 3.5V | 9A | 550(mΩ) | SJ_Multi-EPI |
1. VDS (drain-source voltage): 650V
2. VGS (gate-source voltage): ㊣30V
3. Vth (threshold voltage): 3.5V
4. Drain resistance (m次) when VGS=10V: 550m次
5. ID (drain current): 9A
6. Technology: SJ_Multi-EPI
7. Package: TO220F
Domain and module applications:
Examples of applicable fields and modules:
1. Industrial power module: VBMB165R09S can be used as a switching power supply in industrial power modules to provide stable power output.
2. Electric vehicle controller: This type of transistor is suitable for current regulation and switching control in electric vehicle controllers.
3. Solar inverter: In solar inverter, VBMB165R09S can be used to achieve DC to AC conversion and ensure high efficiency and stability of the system.
4. Power tool driver: Suitable for motor drivers in power tools to help achieve efficient control and power output of the motor.
The above is an introduction to the VBMB165R09S product, detailed parameter descriptions, and examples of applicable fields and modules.
Technical support:
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