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VBI1695 Product details

Product introduction:

VBI1695 is a single N-channel MOSFET suitable for various power circuit applications. It has high rated drain-source voltage and rated drain current, making it suitable for circuit designs requiring higher voltages and currents. In addition, using Trench technology, it has lower gate-source resistance, which can provide higher efficiency and lower conduction loss.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT89 Single-N 60V 20(±V) 1.7V 5.5A 88 (mΩ) 76 (mΩ) Trench
parameter:
- Structure: Single N
- Rated drain-source voltage (VDS): 60V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Gate-source resistance (VGS=4.5V): 88 m次
- Gate-source resistance (VGS=10V): 76 m次
- Rated drain current (ID): 5.5A
- Technology: Trench
-Package: SOT89

Domain and module applications:

for example:
1. Power module: Since VBI1695 has a high rated drain-source voltage and rated drain current, it is suitable for designing power modules with high stability and strong load capacity, such as switching power supplies, DC-DC converters, etc.
2. Motor drive module: In circuits that need to control motors, VBI1695 can be used as a power switch tube, which can provide stable current output to ensure the normal operation of the motor. For example, the inverter part of the motor control module used in electric vehicles.
3. LED lighting module: As a switching element in the LED drive circuit, VBI1695 can control the brightness and switching of LEDs and is suitable for indoor lighting, automotive lighting and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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