VBFB175R02 Product details
Product introduction:
VBsemi's VBFB175R02 is a single N-type field effect transistor, using Plannar technology and packaged in TO251. The product features a drain-to-source voltage (VDS) of up to 750V, making it suitable for a variety of power circuit applications. Its features include low threshold voltage (Vth) and low on-resistance, allowing it to perform well in high-voltage and high-current environments.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 750V | 30(±V) | 3.5V | 2A | 8125 (mΩ) | 6500 (mΩ) | Plannar |
- VDS(V): 750V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- On-resistance when VGS=4.5V: 8125m次
- On-resistance when VGS=10V: 6500m次
- ID (A): 2A
- Technology: Planner
-Package: TO251
Domain and module applications:
3. Examples of applicable fields and modules:
- **Power Module:** Since VBFB175R02 has high drain-source voltage and low on-resistance, it is suitable for use in switching power supplies and inverters in power modules.
- **Industrial Automation:** In the field of industrial automation, this transistor can be used to control high voltage and high current loads, such as motor drives and industrial control systems.
- **Electric vehicle charger:** Due to its high voltage and low threshold voltage, VBFB175R02 can be used in electric vehicle chargers to achieve high-efficiency power conversion.
- **Solar Inverter:** In solar systems, this transistor is used in an inverter to convert the DC power produced by the solar panels into AC power.
These examples illustrate that the VBFB175R02 is suitable for applications requiring high voltage, high current and low on-resistance, covering many different areas and modules.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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