Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
650V |
30（±V） |
3.5V |
6A |
|
|
1700 (mΩ) |
Plannar |
**Detailed parameter description:**
- Brand: VBsemi
- Model: VBFB165R06
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at gate-source voltage 10V: 1700 m次
- Maximum drain current (ID): 6A
- Technology: Plannar
-Package:TO251
Domain and module applications：
**Examples of applicable fields and modules:**
1. **Power Management Module**: VBFB165R06 can be used in various power management modules, such as switching power supplies, DC-DC converters, etc. Its high voltage and low on-resistance characteristics enable it to provide efficient power switching functions.
2. **Electric vehicle driver**: In electric vehicle driver, this type of MOSFET can be used for electric vehicle motor drive and control. Its high voltage and current characteristics allow it to withstand the high voltage and current loads found in electric vehicle drives.
3. **Solar Inverter**: In solar power generation systems, VBFB165R06 can be used in the power switching circuit in solar inverters to achieve effective conversion and management of solar energy. Its high withstand voltage and high current characteristics make it suitable for high-voltage environments in solar power generation systems.
4. **LED Lighting**: In LED lighting systems, this type of MOSFET can be used in LED drivers and lighting control circuits. Its high voltage characteristics and low on-resistance characteristics enable it to provide reliable LED lighting control functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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