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SI3446DV-T1-GE3-VB Product details
Back to previous pageProduct introduction：
**Product Introduction:**
SI3446DV-T1-GE3-VB is a VBsemi brand N-Channel trench field effect transistor (MOSFET) with a rated voltage of 30V and a rated current of 6A. At a gate-source voltage of 10V, its on-resistance is 30mΩ. The device is packaged in SOT23-6 and is suitable for various low-power application scenarios.
SI3446DV-T1-GE3-VB is suitable for various modules and devices in the fields of power management, battery protection, LED drive and low-power motor control, providing stable and reliable power conversion and current control functions.
SI3446DV-T1-GE3-VB is a VBsemi brand N-Channel trench field effect transistor (MOSFET) with a rated voltage of 30V and a rated current of 6A. At a gate-source voltage of 10V, its on-resistance is 30mΩ. The device is packaged in SOT23-6 and is suitable for various low-power application scenarios.
SI3446DV-T1-GE3-VB is suitable for various modules and devices in the fields of power management, battery protection, LED drive and low-power motor control, providing stable and reliable power conversion and current control functions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | 27(mΩ) | 26(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
**Detailed parameter description:**
- Channel type: N-Channel
- Rated voltage (VDS): 30V
- Rated current (ID): 6A
- On-resistance (RDS(ON)): 30mΩ @ VGS=10V
- Gate-source voltage (VGS): ±20V
- Gate-source threshold voltage (Vth): 1.2V
- Package type: SOT23-6
- Channel type: N-Channel
- Rated voltage (VDS): 30V
- Rated current (ID): 6A
- On-resistance (RDS(ON)): 30mΩ @ VGS=10V
- Gate-source voltage (VGS): ±20V
- Gate-source threshold voltage (Vth): 1.2V
- Package type: SOT23-6
Domain and module applications：
**Applicable fields and modules:**
1. **Power management**: SI3446DV-T1-GE3-VB can be used in low-power power management fields, such as switching power supplies and DC-DC converters in portable devices, wireless communication equipment, and industrial control equipment. Its low on-resistance and high current capability can achieve efficient energy conversion and stable power output.
2. **Battery protection**: In the battery protection module, SI3446DV-T1-GE3-VB can be used for charge and discharge control and protection of batteries such as lithium batteries. Its low gate-source threshold voltage and high current carrying capacity make it suitable for applications that require precise control and protection of batteries.
3. **LED drive**: Due to its low on-resistance and high current characteristics, SI3446DV-T1-GE3-VB can be used in LED lighting fields, such as LED drivers and lighting systems. It can provide stable current output to achieve efficient driving and brightness control of LEDs.
4. **Motor control**: In low-power motor control modules, SI3446DV-T1-GE3-VB can be used for motor switch control and drive. Its high current carrying capacity and low on-resistance make it suitable for small motor control applications such as fans, power tools and robots.
1. **Power management**: SI3446DV-T1-GE3-VB can be used in low-power power management fields, such as switching power supplies and DC-DC converters in portable devices, wireless communication equipment, and industrial control equipment. Its low on-resistance and high current capability can achieve efficient energy conversion and stable power output.
2. **Battery protection**: In the battery protection module, SI3446DV-T1-GE3-VB can be used for charge and discharge control and protection of batteries such as lithium batteries. Its low gate-source threshold voltage and high current carrying capacity make it suitable for applications that require precise control and protection of batteries.
3. **LED drive**: Due to its low on-resistance and high current characteristics, SI3446DV-T1-GE3-VB can be used in LED lighting fields, such as LED drivers and lighting systems. It can provide stable current output to achieve efficient driving and brightness control of LEDs.
4. **Motor control**: In low-power motor control modules, SI3446DV-T1-GE3-VB can be used for motor switch control and drive. Its high current carrying capacity and low on-resistance make it suitable for small motor control applications such as fans, power tools and robots.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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