VBsemi UT3416L-AE3-R-VB parameters:
- Package: SOT23-3
- Type: N-channel MOSFET
- Drain-source voltage (Vds): 30V
- Continuous drain current (Id): 6.5A
- On-resistance (RDS(ON)): 30mΩ at VGS=10V, VGS=20V
- Threshold voltage (Vth): 1.2~2.2V

Application Overview:
VBsemi UT3416L-AE3-R-VB is an N-channel MOSFET in SOT23-3 package, suitable for a variety of applications. The following is a brief overview of its parameters and applications:

1. **Package and type:**
- SOT23-3 package, suitable for designs with space constraints.
- N-channel MOSFET, suitable for controlling negative electrical signals.

2. **Electrical Characteristics:**
- **Voltage Rating:**
- Drain-Source Voltage (Vds): 30V, suitable for medium voltage applications.
- **Current Rating:**
- Continuous Drain Current (Id): 6.5A, can handle medium to higher current loads.
- **On-Resistance:**
- RDS(ON): 30mΩ at VGS=10V, VGS=20V, indicating low resistance for efficient conduction.

3. **Threshold Voltage:**
- Threshold Voltage (Vth): 1.2~2.2V, specifies the gate voltage range at which the MOSFET starts to turn on.

Applications:
UT3416L-AE3-R-VB MOSFET can be used in a variety of electronic applications, including:

1. **Power Management:**
- DC-DC Converter.
- Battery Charge and Discharge Management.

2. **Motor Drive:**
- Small Motor Control Circuit.
- Motor Driver and Inverter.

3. **LED Driver:**
- LED Lighting Application.
- LED Display Driver.

4. **Power Switch:**
- Power Switch and Protection Circuit.
- Inverter and Frequency Converter.

5. **Portable Devices:**
- Compact and Portable Electronic Devices.
- Mobile Phones, Tablets and Other Battery-Powered Gadgets.

By making full use of its SOT23-3 package and N-channel characteristics, the UT3416L-AE3-R-VB is suitable for a wide range of applications requiring efficient energy management and load control.