UT3416G-AE3-R-VB is a SOT23-3 packaged N-MOS tube Datasheet parameter video expl

VBsemi UT3416G-AE3-R-VB is a SOT23-3 packaged N-Channel field effect transistor suitable for a variety of electronic applications. The following is a detailed parameter description and application introduction of the product:

- **Parameter Description:**
- Package type: SOT23-3
- Channel type: N—Channel
- Rated voltage: 30V
- Rated current: 6.5A
- On-resistance (RDS(ON)): 30mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): 1.2~2.2V

- **Application Introduction:**
UT3416G-AE3-R-VB can be widely used in different electronic fields and has the following main application features:
- DC-DC converter
- Power switch
- Motor drive
- Power management module

- **Fields and module applications:**
- **DC-DC converter:** Applicable to DC-DC converters to achieve efficient energy conversion.
- **Power switch:** Used in power switch modules to achieve power switch control.
- **Motor drive:** Applicable to motor drive circuits to achieve efficient motor control.
- **Power management module:** Used in various power management modules to ensure that the device has a stable power supply.

These parameters and application information help engineers choose appropriate components in their designs to meet the needs of their specific application areas.