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STN442D-VB, a N-channel TO252 MOSFET datasheet parameters video explanation
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Model: STN442D-VB.
Silk screen: VBE1638.
Brand: VBsemi.
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Parameter description: .
- **N channel:** This device is an N channel Channel MOSFET, suitable for applications where current flows in N-channel. .
- **Operating voltage (VDS):** 60V, indicating the upper limit of the withstand voltage of MOSFET, which can be used in circuits requiring higher voltage. .
- **Continuous current (ID):** 45A, indicating the maximum current that the MOSFET can withstand. .
- **On-resistance (RDS(ON)):** 24mΩ @ 10V, 28mΩ @ 4.5V, 20Vgs (±V), indicating the resistance of the MOSFET in the on-state, these two values correspond to different gate voltages. .
- **Threshold voltage (Vth):** 1.8V, indicating the gate voltage required for the MOSFET to enter the conductive state. .
- **Package:** TO252, this is the package type of MOSFET. .
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Application Introduction: .
This type of N-channel MOSFET is commonly used in power electronic applications in various fields, including but not limited to: .
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1. * *Power Module:** Can be used in switching power supplies, DC-DC converters and inverters to improve energy efficiency. .
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2. **Motor driver:** Used in motor control, electric vehicles and industrial automation to achieve efficient control of motors. .
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3. **Lighting Application:** Can be used in LED drive circuits, lighting systems and dimming applications. .
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4. **Battery Management:** Used for battery protection circuit, charge and discharge control and battery management system. .
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5. **Electronic load:** Used for analog or digital electronic load to test the performance of the power supply. .
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6. **Solar inverter:** Used in solar power generation systems to convert DC power from solar panels into AC power. .
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This type of MOSFET has excellent performance in high voltage and high current applications and can be used in a variety of power electronics fields to improve efficiency and performance.

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