Model: STN3PF06-VB.
Silkscreen: VBJ2658.
Brand: VBsemi.
Parameters:.
- P-channel.
- -60V.
- -6.5A.
- RDS(ON): 58mΩ@10V, 70mΩ@4.5V.
- 20Vgs(±V).
- -1~-3Vth(V).
- Package: SOT223.
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Detailed parameter description:.
- P-channel: Indicates that this is a P-channel MOSFET, commonly used in applications such as load drive and switching circuits..
- -60V: Indicates that the maximum withstand voltage is -60V, that is, the voltage cannot exceed -60V during operation. .
- -6.5A: indicates the maximum drain current is -6.5A, that is, during operation, the drain current cannot exceed -6.5A. .
- RDS(ON): indicates the internal resistance in the on state. It is 58mΩ at a voltage of 10V and 70mΩ at a voltage of 4.5V. .
- 20Vgs(±V): indicates the maximum gate-source voltage, that is, during operation, the gate-source voltage cannot exceed 20V. .
- -1~-3Vth(V): indicates the threshold voltage range, between -1V and -3V. .
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Application Introduction: .
This STN3PF06-VB is a P-channel MOSFET suitable for applications such as load driving and switching circuits. Because it can withstand high withstand voltage and drain current, it is suitable for applications requiring high power and high frequency. .
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Field modules for which these products are applicable: .
These products can be widely used in module designs in various fields, including but not limited to the following fields: .
1. Power modules: used for power switches and power control circuits. .
2. Power tools: used for control circuits of power tools, such as electric drills, electric hammers, etc. .
3. Lighting: used for LED drive circuits and lighting control. .
4. Automotive electronics: used for automotive electronic modules, such as engine control units, lighting control, etc. .
5. Industrial automation: used for control circuits of various industrial automation equipment. .
6. Communication equipment: used for power amplification and switching circuits of communication equipment. .
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In short, the STN3PF06-VB P-channel MOSFET is suitable for module design in a variety of application fields, especially for high-power and high-frequency applications that require high withstand voltage and drain current. .