Model: SSM3J327R-VB.
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Silk screen: VB2290.
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Brand: VBsemi.
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Parameters:.
- Package type: SOT23.
- Channel type: P-Channel.
- Rated voltage: -20V.
- Maximum current: -4A.
- On-state resistance: RDS(ON) = 57mΩ @ VGS=4.5V, VGS=12V.
- Threshold voltage: Vth = -0.81V.
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Package: SOT23.
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**Detailed parameter description:**.
1. **Package Type:** SOT23, indicating that the device uses SOT23 package. .
2. **Channel Type:** P-Channel, indicating that this is a P-channel MOSFET. .
3. **Rated Voltage:** -20V, indicating the maximum negative voltage at which the device can operate normally. .
4. **Maximum Current:** -4A, indicating the maximum current that the device can withstand, and the negative sign indicates that the current direction is from the drain to the source. .
5. **On-State Resistance:** RDS(ON) = 57mΩ @ VGS=4.5V, VGS=12V, indicating the resistance in the on state under a specific gate-source voltage. .
6. **Threshold Voltage:** Vth = -0.81V, indicating the minimum voltage required for the device to switch from the off state to the on state under the action of the gate-source voltage. .
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**Application Introduction:**.
SSM3J327R-VB is a P-Channel MOSFET suitable for a variety of applications, including but not limited to:.
1. **Power Switch:** Due to its P-channel nature, it can be used in power management modules such as power switch and battery protection. .
2. **Battery Protection:** Suitable for battery management systems to protect batteries from over-discharge and over-charge. .
3. **Signal Switch:** Used to switch signal lines, such as in communication systems. .
4. **Mobile Devices:** Suitable for power management and battery protection circuits in mobile devices such as mobile phones and tablets. .
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Please note that the data sheet and application manual of the device should be carefully referred to in the specific design to ensure correct use and performance.