Model: SSM3J328R-VB.
Silk screen: VB2355.
Brand: VBsemi.
Parameter description: .
- Polarity: P channel.
- Rated voltage: -30V.
- Maximum continuous drain current: -5.6A.
- Static drain-source resistance (RDS(ON)): 47mΩ @ 10V, 56mΩ @ 4.5V.
- Gate-source voltage ( Vgs): 20V (±V).
- Turn-on voltage (gate threshold voltage): -1V.
- Package: SOT23.
.
Application introduction: .
SSM3J328R-VB It is a P-channel field-effect transistor (MOSFET) device with low drain-source resistance and moderate current handling capabilities. This makes it very useful in a variety of electronic applications. .
.
Application fields: .
1. **Power module**: Since SSM3J328R-VB has low drain-source resistance, it is suitable for power management modules, battery protection circuits and switching power supplies , helping to improve power conversion efficiency. .
.
2. **Signal Switch**: This MOSFET device can be used in various signal switching applications, such as low voltage signal switching and circuit protection. .
.
3. **Battery Management**: In portable devices and wireless communication equipment, SSM3J328R-VB can be used in battery management systems to ensure safe charging, discharging and protection of batteries. .
.
4. **Power Management**: In power management circuits, this MOSFET can be used for power switching and power distribution. .
.
In summary, SSM3J328R-VB is a versatile electronic device suitable for a variety of electronic applications that require moderate current carrying capacity, low resistance and reliability. It can be used for power management, signal switches, battery management, power management and other modules.