Model: SQ3427EEV-T1-GE3-VB.
Silk screen: VB8658.
Brand: VBsemi.
Parameters:.
- P channel.
- Maximum withstand voltage: -60V.
- Maximum current: -6.5A.
- Static on-resistance: 50mΩ @ 10V, 60mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage range: -1V to -3V.
- Package: SOT23-6.
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**Detailed parameter description:**.
SQ3427EEV-T1-GE3-VB is a P-channel MOSFET with a maximum withstand voltage of -60V, the maximum The current is -6.5A. Its static on-resistance behaves as follows at different voltages: 50mΩ at 10V, 60mΩ at 4.5V, and the driving voltage range is ±20V. The threshold voltage range is -1V to -3V, making it suitable for a variety of drive voltage requirements. The device is packaged in SOT23-6 and is suitable for use in limited spaces. .
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**Application introduction: **.
SQ3427EEV-T1-GE3-VB is suitable for modules in a variety of fields, including but not limited to: .
1. **Power management module **: Due to its moderate withstand voltage and low on-resistance, it can be used in power switches, current control and power management modules to help improve power conversion efficiency. .
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2. **Battery charge and discharge protection**: In the battery management system, it can be used for battery charge and discharge protection and current control to ensure the safety and performance of the battery. .
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3. **Switching power supply**: Suitable for small switching power supplies, such as mobile phone chargers, portable device chargers, etc. .
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4. **Motor drive**: Can be used for small motor control and drive modules, such as fans, power tools, etc. .
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In short, SQ3427EEV-T1-GE3-VB is suitable for a variety of fields requiring P-channel MOSFETs with low voltage drive and moderate current capability, including power management, battery management, switching power supply and motor drive, etc. field. Its performance parameters make it ideal for many electronic modules.