Model: SQ3426EEV-T1-GE3-VB.
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Silk screen: VB7638.
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Brand: VBsemi.
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Parameters:.
- Package type: SOT23-6.
- Channel type: N-Channel.
- Rated voltage: 60V.
- Maximum current: 7A.
- On-state resistance: RDS(ON) = 30mΩ @ VGS=10V, VGS=20V.
- Threshold voltage: Vth = 1~3V.
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Package: SOT23-6.
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**Detailed parameter description:**.
1. **Package Type:** SOT23-6, indicating that the device uses SOT23-6 package with six pins. .
2. **Channel Type:** N-Channel, indicating that this is an N-channel MOSFET. .
3. **Rated Voltage:** 60V, indicating the maximum voltage at which the device can work normally. .
4. **Maximum Current:** 7A, indicating the maximum current that the device can withstand. .
5. **On-State Resistance:** RDS(ON) = 30mΩ @ VGS=10V, VGS=20V, indicating the resistance in the on state under a specific gate-source voltage. .
6. **Threshold Voltage:** Vth = 1~3V, indicating the voltage range required for the device to switch from the off state to the on state under the action of the gate-source voltage. .
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**Application Introduction:**.
SQ3426EEV-T1-GE3-VB is an N-Channel MOSFET suitable for a variety of applications, including but not limited to:.
1. **Power Switch:** Due to its N-channel nature and higher rated current, it can be used for power switches and power inverters. .
2. **Motor Drive:** Suitable for medium power DC motor and stepper motor drive circuits, providing efficient current control. .
3. **Power Inverter:** Used in solar inverters and other power inverters, providing efficient energy conversion. .
4. **Power Management Module:** Suitable for various power management applications, such as switching power supplies, battery management, etc. .
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Please note that the data sheet and application manual of the device should be carefully referred to in the specific design to ensure correct use and performance.