Model: SM1105NSV-VB.
Silk screen: VBJ1101M.
Brand: VBsemi.
Parameters: .
- N channel.
- Rated voltage: 100V.
- Maximum leakage current : 5A.
- Static drain-source resistance (RDS(ON)): 100mΩ @ 10V, 120mΩ @ 4.5V, 20Vgs.
- Threshold voltage (Vth) range: 2V to 4V.
- Package: SOT223.
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Application Introduction: .
SM1105NSV-VB is an N-channel field effect transistor suitable for a variety of low- and medium-power electronic applications with low on-resistance and higher rated voltage. The following are some possible application areas and modules: .
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1. **Power Management**: This N-channel MOSFET is suitable for low-power power management modules such as power switches, power management units and power supplies adapter. It helps achieve high efficiency and reliability of the circuit. .
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2. **Battery Protection**: In portable electronic devices, SM1105NSV-VB can be used in battery protection circuits to ensure safety and stability during battery charging and discharging. .
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3. **Signal Switch**: This MOSFET can be used in low power signal switching applications, such as analog signal switching, digital signal switching and signal amplifier. .
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4. **Power switch**: In low-power power switching circuits, it can be used to control and adjust power output to meet the power needs of different low-power electronic devices. .
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5. **Current adjustment module**: SM1105NSV-VB can also be used in low-power current adjustment modules, such as LED drivers, low-power current adjustment circuits and power management units to ensure the circuit output Stability and accuracy. .
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In short, SM1105NSV-VB N-channel MOSFET is suitable for a variety of low-power and medium-power applications, including power management, battery protection, signal switches, power switches and low-power current adjustment modules. It helps achieve high performance and reliability in low-power electronic systems.