**Detailed parameter description:**.
- Model: SIS412DN-T1-GE3-VB.
- Silk screen: VBQF1320.
- Brand: VBsemi.
- Package: DFN8(3X3).
- Type: 2 N-Channel channels.
- Rated voltage: 30V.
- Rated current: 18A.
- On-resistance: 20mΩ @ VGS=10V, VGS=20V.
- Threshold voltage: 1.5V.
.
**Application introduction:**.
This is a power field effect transistor (Power MOSFET) integrating two N-Channel channels , suitable for DFN8 (3X3) package. Its features include a rated voltage of 30V, a rated current of 18A, low on-resistance, etc., making it suitable for small high-power electronic applications. .
.
**Application fields:**.
This device is often used in small electronic modules such as power switches, power amplifiers, and motor drives. In these modules, it can be used for power conditioning of small power supplies, drive and control of small motors, and amplification of small signals. .
.
**Function:**.
- In small power switch modules, it can be used for power regulation and control of small power power supplies. .
- In small power amplifier modules, it can be used to amplify small power signals. .
- In the small motor drive module, it can be used to drive and control small power motors. .
.
**Usage Precautions:**.
- Strictly operate in accordance with the maximum ratings provided in the data sheet to prevent device damage. .
- Pay attention to the electrostatic sensitivity of the device and take appropriate protective measures. .
- Consider heat dissipation and temperature management in the design to ensure that the device is within the normal operating temperature range. .
- Follow proper welding and installation standards to ensure reliable electrical connections and mechanical strength.