Model: SIR802DP-T1-GE3-VB.
Silk screen: VBQA1302.
Brand: VBsemi.
Parameter description:.
- MOSFET type: N channel.
- Rated voltage: 30V .
- Maximum current: 160A.
- On-resistance (RDS(ON)): 1.8mΩ @ 10V, 2.5mΩ @ 4.5V, 20Vgs.
- Threshold voltage (Vth): 2V.
- Package: DFN8(5X6).
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Application Introduction:.
SIR802DP-T1-GE3-VB is a high-performance N-channel MOSFET, suitable for applications requiring high current and low conduction Resistors in electronic devices and circuits. It has a wide range of applications in some domain-specific modules. .
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**Application fields and module description:**.
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1. **Power module**:.
- Due to its extremely low on-resistance and high Current carrying capacity, SIR802DP-T1-GE3-VB is suitable for high power power modules. .
- Can be used in switching power supplies, DC-DC converters, high-performance server power supplies, electric vehicle charging piles and other fields to provide efficient power conversion. .
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2. **Motor Drive Module**: .
- The high current and low on-resistance of this MOSFET make it ideal for motor drive modules. .
- Used to improve the performance and efficiency of motors in the fields of power tools, electric vehicle motor drives, motor control, etc. .
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3. **Battery Management Module**: .
- SIR802DP-T1-GE3-VB can be used for battery charge and discharge control in high-power battery management module. .
- Used in electric vehicles, solar inverters, industrial UPS and other fields to achieve safe and efficient management of high-power batteries. .
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4. **High Power Switch Module**: .
- This MOSFET is very useful in applications that require high power switching control, such as high power motor control, battery voltage regulation, etc. . .
- Helps achieve reliable and precise control of high power circuits. .
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5. **Industrial Automation Module**: .
- Due to its high performance and reliability, SIR802DP-T1-GE3-VB can be used in industrial automation modules such as PLC (Programmable Logic controller) and sensor control. .
- Helps realize factory automation and robot control. .
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In summary, SIR802DP-T1-GE3-VB is a high-performance N-channel MOSFET, suitable for high-power power supplies, motor drives, battery management, high-power switches and industrial automation and other fields. module. Its low on-resistance, high current handling capabilities and high performance characteristics make it a key component in a variety of high-power electronic devices and systems, helping to improve efficiency and performance.