Detailed parameter description:.
- Model: SI9424DY-T1-E3-VB.
- Silkscreen: VBA2216.
- Brand: VBsemi.
- Parameters: P-channel, -20V, -8A, RDS(ON), 16mΩ @ 4.5V, 19.2mΩ @2.5V, 15Vgs (±V); -0.6～-2Vth(V); SOP8.
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Application introduction:.
SI9424DY-T1-E3-VB is a P-channel power MOSFET device suitable for electronic module applications in various fields. It has low resistance and high current carrying capacity, suitable for circuits requiring high performance and high reliability. .
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This device is widely used in the following fields and modules: .
1. Power module: Due to its low resistance and high current carrying capacity, SI9424DY-T1-E3-VB is suitable for DC/DC regulators and switching transient stabilizers in power modules. It can provide efficient power conversion and stable power supply. .
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2. Motor drive: SI9424DY-T1-E3-VB can be used as a motor drive device to control and drive motors. Its low resistance and high current carrying capacity can provide the high efficiency and high performance required by motors. .
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3. LED lighting: SI9424DY-T1-E3-VB has low resistance and high current carrying capacity, which is suitable for LED lighting in power modules and drive circuits. It can provide efficient power conversion and stable LED drive. .
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4. Battery management: SI9424DY-T1-E3-VB can be used in battery management modules for battery charge and discharge control and management. Its low resistance and high current carrying capacity can provide high-efficiency and reliable battery management functions. .
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In short, SI9424DY-T1-E3-VB is a superior performance P-channel power MOSFET device suitable for electronic module applications in power modules, motor drives, LED lighting and battery management. It can provide high-efficiency, high-reliability and stable power conversion and control functions. .