Model: SI9410BDY-T1-E3-VB.
Silkscreen: VBA1311.
Brand: VBsemi.
Parameters:.
- N-channel MOSFET.
- Rated voltage: 30V.
- Maximum continuous current: 12A.
- Static on-resistance (RDS(ON)): 12mΩ @ 10V, 15mΩ @ 4.5V.
- Gate-source voltage (Vgs): Maximum ±20V.
- Threshold voltage (Vth): 0.8~2.5V.
Package: SOP8.
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Detailed parameter description:.
SI9410BDY-T1-E3-VB is an N-channel MOSFET designed for low voltage, high current applications. It is rated for 30V and can withstand a continuous current of up to 12A. The MOSFET has excellent on-resistance, with a static on-resistance of 12mΩ at 10V and 15mΩ at 4.5V. This low resistance helps reduce power dissipation and heat, making it suitable for applications that require efficient energy consumption. .
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SI9410BDY-T1-E3-VB has a wide range of gate-source voltage (Vgs) up to ±20V, with good control characteristics. Its threshold voltage (Vth) range is 0.8V to 2.5V, enabling precise control in different applications. .
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Application Introduction: .
SI9410BDY-T1-E3-VB is widely used in the following fields and modules: .
1. **Power Management Module**: This MOSFET is suitable for low-voltage power management for battery management, charge and discharge control, and power factor correction. .
2. **Motor Drive**: Due to its high current handling capability, it can be used for motor control, such as electric vehicle motor control, industrial motor drive, etc. .
3. **DC-DC Converter**: The low on-resistance and high efficiency of SI9410BDY-T1-E3-VB make it an ideal choice for DC-DC converters, which can be used in power adapters and energy converters. .
4. **Power Switch**: Suitable for various types of power switches, such as power switch modules (PSUs) and inverters. .
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In summary, SI9410BDY-T1-E3-VB is a versatile N-channel MOSFET suitable for a variety of low-voltage, high-current applications, providing high-performance and reliable solutions for modules such as power management, motor control and DC-DC converters.