Model: SI4435DDY-T1-E3-VB.
Silk screen: VBA2317.
Brand: VBsemi.
Parameters:.
- Channel type: P channel.
- Rated voltage: - 30V.
- Rated current: -7A.
- Turn-on resistance (RDS(ON)): 23mΩ @ 10V, 29mΩ @ 4.5V, 66mΩ @ 2.5V.
- Gate-source threshold voltage Range (Vth): -1.37V.
- Gate drive voltage range: ±20V.
- Package type: SOP8.
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Application introduction: .
SI4435DDY-T1-E3 -VB is a P-channel MOSFET suitable for a variety of low voltage and high current electronic applications. Following are some possible application areas and modules where this MOSFET may be widely used: .
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1. **Power Management**: This MOSFET can be used in low voltage power management applications such as portable devices , power inverter and power switch. It enables power control, voltage regulation and efficient energy conversion. .
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2. **Battery Protection**: SI4435DDY-T1-E3-VB can be used in the battery protection circuit in the battery management system to ensure that the battery is not subjected to excessive damage during charging and discharging. .
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3. **Low Power Electronics**: This MOSFET is suitable for electronic devices that require low power operation, such as sensor nodes, embedded systems, and Internet of Things (IoT) devices. It helps reduce power consumption and extend battery life. .
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4. **Signal switch**: In various signal switch applications, SI4435DDY-T1-E3-VB can be used as part of a signal amplification and switching circuit to control signal transmission and processing. .
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5. **Charging Protection**: This MOSFET can also be used in charging circuits to achieve battery charging management and protection to ensure the safety and efficiency of the charging process. .
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Overall, SI4435DDY-T1-E3-VB is a versatile P-channel MOSFET suitable for low voltage, low power consumption and high current applications. It has wide application potential in many fields such as power management, battery protection, low-power electronics, signal switching and charging protection.