**Product model:** SI4435BDY-T1-E3-VB.
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**Silk screen:** VBA2317.
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**Brand:** VBsemi.
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**Parameters: **.
- Package: SOP8.
- Channel type: P—Channel.
- Rated voltage: -30V.
- Rated current: -7A.
- Static on-resistance (RDS(ON)): 23mΩ @ VGS=10V, VGS=20V.
- Threshold voltage (Vth): -1.37V.
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**Package:* * SOP8.
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**Detailed parameter description: **.
SI4435BDY-T1-E3-VB is a P-Channel field effect transistor in SOP8 package. Its rated voltage is -30V, its rated current is -7A, and it has a low static on-resistance (RDS(ON)) of 23mΩ when VGS=10V or VGS=20V. The threshold voltage (Vth) is -1.37V. This device is suitable for low voltage and medium power applications and provides efficient power switching performance. .
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**Application introduction: **.
SI4435BDY-T1-E3-VB is suitable for power modules in various fields, including but not limited to: .
1. **Power module :** Used in low-voltage, medium-power regulated power supplies, switching power supplies and other applications to achieve energy conversion. .
2. **Battery Management:** As part of the battery management module, it realizes efficient charge and discharge control of the battery. .
3. **Power Inverter:** Used for low voltage and medium power inverter applications such as solar inverters and electric vehicle inverters. .
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**Function:**.
Among the above modules, the main function of SI4435BDY-T1-E3-VB is to realize low-voltage and medium-power switching control to ensure the stability and stability of the module. Efficient performance. .
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**Precautions for use:**.
1. **Electrostatic protection:** During operation, anti-static measures need to be taken to avoid damage to the device. .
2. **Power supply matching:** In design, ensure that the power supply of the device matches its rated parameters to ensure performance and reliability. .
3. **Working conditions:** Understand and comply with the working conditions and electrical characteristics of the device, and ensure it is used under the specified working conditions. .
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These suggestions are intended to ensure the reliability and performance of the device. Please refer to the device data sheet and technical specifications provided by the manufacturer for specific use.