**SI4134DY-T1-E3-VB**.
.
**Silkscreen:** VBA1311 .
**Brand:** VBsemi .
**Parameters:** SOP8; N—Channel, 30V; 12A; RDS(ON)=12mΩ@VGS=10V, VGS=20V; Vth=0.8~2.5V .
.
**Package:** SOP8 .
.
**Detailed parameter description:** .
- **Channel type:** N—Channel .
- **Maximum withstand voltage:** 30V .
- **Maximum current:** 12A .
- **On-resistance:** 12mΩ (at VGS=10V), 12mΩ (at VGS=20V) .
- **Threshold voltage:** 0.8~2.5V .
.
**Application Introduction:** .
This device is an N-Channel MOSFET, suitable for modules that need to control forward current. It can be used in applications such as power switching, power control and current regulation. .
.
**Function:** .
- Control forward current. .
- Play a key role in power switching and power control circuits. .
.
**Application Area Module:**.
1. **Power Switch Module:** Used to build efficient power switches that can control forward current. .
2. **Power Control Module:** Used in applications that require reliable power control to ensure stable power supply. .
3. **Current Regulation Module:** Used to adjust and control the current size to ensure normal operation of the system. .
.
**Precautions for use:**.
1. **Voltage and Current Limitation:** Do not exceed the specified maximum voltage and current. .
2. **Threshold voltage range:** Ensure proper threshold voltage in design to ensure normal operation. .
3. **Temperature control:** Pay attention to the temperature of the device during operation to avoid overheating. .
.
Please let me know if you need further information or have other questions.