Model: SI3911DV-T1-GE3.
Silk screen: VB4290.
Brand: VBsemi.
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Detailed parameter description:.
- Type: 2 P-channel MOSFETs.
- Maximum withstand voltage: -20V.
- Maximum current: -4A.
- On-resistance: 75mΩ @4.5V, 100mΩ @2.5V.
- Gate-source voltage: 12Vgs (±V).
- Gate threshold voltage: -1.2~-2.2Vth.
- Package: SOT23-6.
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Application Introduction:.
SI3911DV-T1-GE3 is a device with two P-channel MOSFETs, which is suitable for applications that require simultaneous control of multiple P-channel MOSFETs. Its maximum withstand voltage is -20V, maximum current is -4A, with low on-resistance and high performance. .
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This device is suitable for module design in multiple fields, mainly including: .
1. Power management module: Suitable for power management module responsible for power switch and load switch control. .
2. High-voltage load switch module: Suitable for high-voltage load switch and power control. .
3. Power tools: Can be used for negative power control and load switch in power tools. .
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In short, SI3911DV-T1-GE3 is suitable for module design in high-power application fields that require simultaneous control of multiple P-channel MOSFETs, including power management, high-voltage load switch modules, and power tools.