Model: SI3477DV-T1-GE3.
Silk screen: VB8338.
Brand: VBsemi.
Parameters: .
- Channel type: P channel.
- Rated voltage: -30V.
- Rated current: -4.8A.
- RDS(ON): 49mΩ @ 10V, 54mΩ @ 4.5V.
- Gate-source voltage range: ±20V.
- Gate-source threshold voltage range: -1V~-3V.
- Package type: SOT23-6.
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Application introduction: .
SI3477DV-T1-GE3 (silk screen: VB8338) is a P-channel produced by VBsemi Company channel power MOSFET. The following is a detailed parameter description and application introduction: .
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Detailed parameter description: .
SI3477DV-T1-GE3 is a P-channel power MOSFET, suitable for applications with low voltage and low power consumption. circuit. The main parameters include rated voltage of -30V, rated current of -4.8A, RDS(ON) of 49mΩ @ 10V, 54mΩ @ 4.5V, gate-source voltage range of ±20V, gate-source threshold voltage range of -1V~-3V, The package type is SOT23-6. .
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Application fields: .
SI3477DV-T1-GE3 (VB8338) is suitable for a variety of fields and application scenarios, mainly used in low-power circuits that require P-channel power MOSFET. The following are some typical application areas: .
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1. Power management module: SI3477DV-T1-GE3 can be used in the power management module to provide efficient power conversion and stable current output, improving the power consumption of the system and efficiency. .
2. Battery management system: It is suitable for charge and discharge control circuits in battery management systems, providing high-efficiency and reliable battery management. .
3. Portable equipment: SI3477DV-T1-GE3 is suitable for power management, power switch, battery management, etc. in portable equipment. .
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In summary, SI3477DV-T1-GE3 (VB8338) is a P-channel power MOSFET, suitable for modules in power management modules, battery management systems, portable devices and other fields. It has the characteristics of low on-resistance and high withstand voltage, and is suitable for circuits requiring low power consumption and high performance.