Model: Si2338DS-T1-GE3.
Silk screen: VB1330.
Brand: VBsemi.
Parameters:.
- Channel type: N channel.
- Rated voltage: 30V.
- Rated current: 6.5A.
- RDS(ON): 30mΩ @ 10V, 33mΩ @ 4.5V.
- Gate-source voltage range: ±20V.
- Gate-source threshold voltage range: 1.2V ~2.2V.
- Package type: SOT23.
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Application introduction: .
Si2338DS-T1-GE3 (silk screen: VB1330) is an N-channel power MOSFET produced by VBsemi Company. The following is a detailed parameter description and application introduction: .
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Detailed parameter description: .
Si2338DS-T1-GE3 is an N-channel power MOSFET, suitable for inductive loads, switching power supplies and DC- Applications such as DC converters that require high current carrying capabilities and low on-resistance. The main parameters include rated voltage of 30V, rated current of 6.5A, RDS(ON) of 30mΩ @ 10V, 33mΩ @ 4.5V, gate-source voltage range of ±20V, gate-source threshold voltage range of 1.2V~2.2V, package type for SOT23. .
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Application fields: .
Si2338DS-T1-GE3 (VB1330) is suitable for a variety of fields and application scenarios, and is mainly used in high-current circuits that require N-channel power MOSFETs. The following are some typical application fields: .
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1. Power management module: Si2338DS-T1-GE3 can be used in the power management module to provide efficient power conversion and stable current output, improving the power consumption of the system and efficiency. .
2. Power tools and household appliances: It can be used in motor drive circuits in power tools and household appliances to provide efficient and reliable power output. .
3. Automotive electronic systems: Si2338DS-T1-GE3 is suitable for power management, motor drive and lighting control in automotive electronic systems, meeting the high current and high power requirements of automotive electronic systems. .
4. Industrial control systems and communication equipment: Si2338DS-T1-GE3 is suitable for switching circuits in industrial control systems and communication equipment, providing stable power management and current control. .
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In summary, Si2338DS-T1-GE3 (VB1330) is an N-channel power MOSFET, suitable for power management modules, power tools, automotive electronic systems, industrial control systems and communication equipment, etc. module. It features high current carrying capacity and low on-resistance, making it suitable for circuits requiring high power and efficiency.