Si2342DS-T1-GE3 (VB1240) parameter description: N-channel, 20V, 6A, on-resistance 24mΩ@4.5V, 33mΩ@2.5V, gate-source voltage range 8V (±V), adjustable threshold voltage range 0.45~1V, package: SOT23. . Application introduction: Si2342DS-T1-GE3 is an N-channel MOSFET for medium and low voltage applications, suitable for power switches, LED drivers and battery management modules. .
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