Model: SI2336DS-T1-GE3-VB.
Silk screen: VB1330.
Brand: VBsemi.
Parameters:.
- Channel type: N—Channel.
- Rated voltage: 30V.
- Rated current: 6.5A.
- On-resistance (RDS(ON)): 30mΩ @ VGS=10V, VGS=20V.
- Threshold voltage (Vth): 1.2~2.2V.
- Package: SOT23.
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Application Introduction:.
VBsemi's SI2336DS-T1-GE3-VB is an N—Channel field effect transistor suitable for low-power, low-voltage application scenarios. It is widely used in various electronic systems and modules, providing efficient power control and switching performance. .
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**Main features:**.
1. Suitable for low voltage working environment, rated voltage is 30V. .
2. Low on-resistance, providing high efficiency power control performance. .
3. Wide operating voltage range, suitable for a variety of power systems. .
4. Flexible threshold voltage range to meet different driving requirements. .
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**Application fields and modules:**.
1. **Power switch module:** Used to build low power, portable power switch module, suitable for mobile devices, wireless sensors and other fields. .
2. **DC-DC converter:** In low power DC converter, it provides high efficiency power conversion, suitable for portable devices, embedded systems and other scenarios. .
3. **Motor drive and control system:** Suitable for low power motor drive module, such as power tools, electronic toys and other fields. .
4. **Signal amplifier:** Can be used to build low power signal amplifier, suitable for audio amplifier, sensor interface and other fields. .
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**Precautions for use:**.
1. Please ensure that the device is connected correctly during design, and avoid reverse connection and overload to prevent damage to the device. .
2. Please use the voltage and current according to the maximum ratings provided in the data sheet to ensure stable and reliable performance. .
3. Pay attention to appropriate heat dissipation measures to maintain the appropriate temperature of the device during operation. .
4. Ensure that the device operates under the specified environmental conditions and avoid exceeding the temperature and voltage limits.