Model: SI2333DS-T1-GE3-VB.
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Screen printing: VB2290.
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Brand: VBsemi.
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Parameter: .
- Package type: SOT23 .
- Channel type: P-Channel.
- Rated voltage: -20V.
- Maximum current: -4A.
- On-state resistance: RDS(ON) = 57mΩ @ VGS= 4.5V, VGS=12V.
- Threshold voltage: Vth = -0.81V.
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Package: SOT23.
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**Detailed parameter description:**.
1. **Package Type:** SOT23, indicating that the device uses SOT23 packaging. .
2. **Channel Type:** P-Channel, indicating that this is a P-channel MOSFET. .
3. **Rated Voltage:** -20V, indicating the maximum negative voltage that the device can work normally. .
4. **Maximum Current:** -4A, which indicates the maximum current that the device can withstand. The negative sign indicates that the current direction is from drain to source. .
5. **On-State Resistance:** RDS(ON) = 57mΩ @ VGS=4.5V, VGS=12V, indicating the resistance in the open state under a specific gate-source voltage . .
6. **Threshold Voltage:** Vth = -0.81V, which represents the minimum voltage required for the device to switch from the off state to the on state under the action of the gate-source voltage. .
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**Application Introduction:**.
SI2333DS-T1-GE3-VB is a P-Channel MOSFET, suitable for a variety of application fields, including but not limited to:.
1. **Power Management Module:** Due to its P-channel nature, it can be used in power management modules such as power switches and inverters. .
2. **Battery Protection:** Suitable for battery management systems to protect batteries from over-discharge and over-charge. .
3. **Charge switch:** Used to control the flow of charge, such as in mobile device charging circuits. .
4. **Signal switch:** Used to switch signal lines, such as in communication systems. .
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Please note that the data sheet and application manual of the device should be carefully referenced in specific designs to ensure correct use and performance.