Model: SI2328DS-T1-GE3-VB.
.
**Silkscreen:** VB1102M.
.
**Brand:** VBsemi.
.
**Parameters:**.
- Type: N-channel.
- Rated voltage (Vds): 100V.
- Maximum current (Id): 2A.
- Static drain-source resistance (RDS(ON)): 246mΩ @ 10V, 260mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage (Vth): 2V.
- Package: SOT23.
.
**Product Introduction:**.
SI2328DS-T1-GE3-VB is an N-channel field effect transistor (MOSFET) produced by VBsemi, suitable for a variety of electronic applications. The device has moderate current handling capability and medium voltage characteristics, suitable for circuits requiring medium power and current control. .
.
**Main features:**.
- Moderate current handling capability: Suitable for medium current loads with suitable performance. .
- Medium rated voltage: The rated voltage (Vds) is 100V, suitable for medium power supply voltage range. .
- Low on-resistance: Has a relatively low static drain-source resistance (RDS(ON)), which helps reduce power consumption and improve efficiency. .
- SOT23 package: The small SOT23 package is suitable for compact circuit design. .
.
**Application areas:**.
SI2328DS-T1-GE3-VB is generally used in the following fields and modules: .
.
1. **Low-power electronic devices:** Due to its moderate current handling capability and medium voltage characteristics, it is often used in low-power electronic devices such as portable devices, sensors and small power management. .
.
2. **Power switching device:** Due to medium voltage and moderate current carrying capacity, it is often used as a power switching device such as switching power supplies, inverters and regulators to improve the efficiency and performance of the circuit. .
.
3. **Signal switch:** In signal switching circuits, such as switching circuits in analog and digital circuits, to achieve signal switching and control. .
.
4. **Power management:** SI2328DS-T1-GE3-VB can be used in power management modules such as battery charging, power selection and low-power standby mode. .
.
It should be noted that the specific application field may vary depending on the product use, circuit design and specification requirements. When selecting and using this model, it is recommended to determine its applicability based on the electrical characteristics and performance requirements of the specific application. This device is suitable for applications that require medium power and current control.