Model: SI2324DS-T1-GE3.
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Silk screen: VB1102M.
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Brand: VBsemi.
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Detailed parameter description:.
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- Type: N-channel MOSFET.
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- Maximum withstand voltage: 100V.
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- Maximum current: 2A.
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- On-resistance: 246mΩ @10V, 260mΩ @4.5V.
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- Gate-source voltage: 20Vgs.
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- Gate threshold voltage: 2Vth.
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- Package: SOT23.
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Application introduction:.
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SI2324DS-T1-GE3 is an N-channel MOSFET suitable for circuits that need to switch high voltage and high current. Its maximum withstand voltage is 100V, the maximum current is 2A, and it has low on-resistance to support high power transmission. .
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The device has fast switching speed and low switching loss, suitable for a variety of applications, including but not limited to: .
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1. Power management module: can be used for current control and power switching in switching power supplies. .
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2. Motor drive module: can be used to drive small DC motors or stepper motors. .
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3. Lighting module: can be used for LED driving and dimming control. .
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In short, SI2324DS-T1-GE3 is suitable for module design in application fields that require high voltage and high current, such as power management, motor drive, and lighting control. .
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