Model: SI2310-VB.
Silkscreen: VB1695.
Brand: VBsemi.
Parameter Description:.
- Channel type: N-channel.
- Rated voltage: 60V.
- Maximum current: 4A.
- Static drain-source resistance (RDS(ON)): 85mΩ@10V, 96mΩ@4.5V.
- Gate-source voltage (±Vgs): 20V.
- Gate-source threshold voltage (Vth) range: 1V to 3V.
- Package type: SOT23.
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Application Introduction:.
SI2310-VB is an N-channel metal oxide semiconductor field effect transistor (MOSFET) with high voltage and moderate current handling capabilities, low drain-source resistance and adjustable gate-source threshold voltage. These features make it widely used in modules in various electronic fields. .
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Application fields: .
1. Power module: SI2310-VB can be used in low to medium power power switch modules to provide power conversion and voltage regulation functions. Suitable for various consumer electronics, communication equipment and industrial equipment. .
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2. Current control: In the current control module, it can be used for current control, current switching and power management, suitable for motor control, power management and battery protection. .
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3. Amplification and signal switching: In the amplification and signal switching module, SI2310-VB can be used for signal amplification and switching functions, suitable for applications such as audio amplifiers, communication interfaces and sensor interfaces. .
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4. Power management: It can also be used in power management modules to achieve efficient energy management, voltage regulation and current protection, suitable for portable electronic devices, battery management systems and chargers. .
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In short, SI2310-VB is a versatile N-channel MOSFET suitable for electronic modules in multiple fields, providing power management, current control, signal amplification and power management functions.