Model: SI2309DS-T1-GE3-VB.
Silk screen: VB2658.
Brand: VBsemi.
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Detailed parameter description: .
- Channel type: P channel.
- Rated voltage: -60V.
- Rated current: -5.2A.
- Turn-on resistance: 40mΩ @ 10V, 48mΩ @ 4.5V.
- Gate-source voltage: 20Vgs (±V).
- Threshold voltage: -2Vth (V).
- Package type: SOT23.
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Application introduction:.
SI2309DS-T1-GE3-VB is a P-channel power MOSFET, suitable for applications in various fields. It has high rated voltage and current rating, and can provide reliable power amplification and switching control. Its low on-resistance can provide lower power consumption at low voltage while maintaining low temperature rise. .
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These products are suitable for modules in the following fields: .
1. Power module: SI2309DS-T1-GE3-VB can be used in switching power supplies in power modules to provide stable and efficient power for electronic equipment. Power conversion. .
2. Motor drive module: Since SI2309DS-T1-GE3-VB has a high rated current and low on-resistance, it can be used in the motor drive module to achieve efficient and precise control of the motor. .
3. Lighting module: SI2309DS-T1-GE3-VB can be used as a switching power supply in LED lighting modules to provide stable and reliable power supply to achieve high-brightness and energy-saving lighting effects. .
4. Battery management module: SI2309DS-T1-GE3-VB can be used for power switch and current control in the battery management module to protect the battery and provide efficient charge and discharge control. .
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In summary, SI2309DS-T1-GE3-VB is suitable for modules in various fields, including power modules, motor drive modules, lighting modules and battery management modules, etc., for power amplification, switch control and Power conversion and other applications. .