Model: SI2302ADS-T1-GE3-VB.
Silkscreen: VB1240.
Brand: VBsemi.
Parameters:.
- N-channel.
- Rated voltage: 20V.
- Maximum current: 6A.
- On-resistance (RDS(ON)): 24mΩ @ 4.5V, 33mΩ @ 2.5V, 8Vgs (±V).
- Threshold voltage (Vth): 0.45~1V.
- Package: SOT23.
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Application Introduction:.
SI2302ADS-T1-GE3-VB is an N-channel MOSFET with low threshold voltage, low on-resistance and moderate current-voltage characteristics. These characteristics make it very useful in a variety of low-power, low-voltage applications. .
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Main features and application areas: .
1. **Low-power electronic devices**: Due to its low threshold voltage and on-resistance, the SI2302ADS-T1-GE3-VB is suitable for low-power electronic devices such as portable electronic devices, smart handheld devices, and sensor nodes. It can help extend battery life. .
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2. **Voltage regulator**: This MOSFET can be used in voltage regulator circuits to achieve efficient voltage step-down or step-up, especially at low input voltages. .
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3. **Battery protection**: In mobile devices and battery-powered systems, the SI2302ADS-T1-GE3-VB can be used in battery protection circuits to ensure safety and stability during battery charging and discharging. .
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4. **Switching applications**: Due to its high current rating, this MOSFET is also suitable for switching circuits such as switching power supplies and switch controls. .
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5. **Low-voltage logic level conversion**: Due to its low threshold voltage, SI2302ADS-T1-GE3-VB can be used for logic level conversion to help interconnect different levels. .
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In short, SI2302ADS-T1-GE3-VB is suitable for a variety of low-power, low-voltage applications, including portable electronic devices, voltage regulators, battery protection, switching applications, and low-voltage logic level conversion modules. Its low threshold voltage and low on-resistance make it an ideal choice for efficient, low-power circuit operation.