SI2301DS-T1-GE3-VB, a P-channel SOT23-3 MOSFET datasheet parameters video explan

SI2301DS-T1-GE3 (VB2290) parameter description: Polarity: P channel; Rated voltage: -20V; Maximum current: -4A; On-resistance: 57mΩ @ 4.5V, 83mΩ @ 2.5V; Gate-source voltage range: 12Vgs (±V) Threshold voltage: -0.81V; Package: SOT23.
Application introduction: SI2301DS-T1-GE3 (VB2290) is a P-channel MOSFET suitable for applications that require current control. .
Its low on-resistance makes it perform well in current control circuits. .
Commonly used in power switches, charge control, power amplification, etc. .
Advantages: Low on-resistance: reduce power consumption and improve efficiency. .
Reliability: As a well-known semiconductor brand, VBsemi's products undergo strict quality control and have high reliability. .
Applicable package: SOT23 package is suitable for designs with limited space. .
Applicable modules: SI2301DS-T1-GE3 (VB2290) Suitable for modules that require current control, such as power switch modules, charge control modules, etc. .