Model: SI1555DL-T1-GE3-VB.
Silkscreen: VBK5213N.
Brand: VBsemi.
.
Detailed parameter description:.
- Type: N+P channel MOSFET.
- Rated voltage (Vds): ±20V.
- Rated current (Id): 2.5A (N channel), -1.5A (P channel).
- On-resistance (RDS(ON)): 130mΩ (N channel) @ 4.5V, 160mΩ (N channel) @ 2.5V, 230mΩ (P channel) @ 4.5V, 280mΩ (P channel) @ 2.5V.
- Threshold voltage (Vth): ±0.6~2V.
- Package type: SC70-6.
.
Application Introduction: SI1555DL-T1-GE3-VB is an N+P channel MOSFET with dual channel (N channel and P channel) characteristics, suitable for various electronic applications. The following are possible application areas of this product: 1. Battery protection circuit: This MOSFET can be used in battery protection circuits to control the charging and discharging process to ensure the safety and stability of the battery. The dual channel design of N channel and P channel MOSFET makes it suitable for battery protection of different polarities. 2. Power switch: SI1555DL-T1-GE3-VB can be used in switching power supply modules such as DC-DC converters and switching regulators. Its low on-resistance helps to improve the efficiency of switching power supplies. 3. Signal switch: In various signal switch applications, this MOSFET can be used to implement signal switching and routing to control the connection and disconnection of circuits. .
.
4. Low voltage applications: .
Due to its lower threshold voltage and low on-resistance, SI1555DL-T1-GE3-VB is suitable for low voltage applications such as portable devices, mobile phones and tablets to achieve efficient circuit control. .
.
In summary, SI1555DL-T1-GE3-VB is a dual-channel (N+P channel) MOSFET suitable for a variety of applications including battery protection, power switching, signal switching and low voltage applications. Its versatility and performance characteristics make it an important component in electronic systems for controlling and regulating the functions of circuits. Please refer to its data sheet in specific applications to ensure correct use. .