Detailed parameter description of Si1553CDL-T1-GE3:.
- Polarity: N+P channel.
- Rated voltage: ±20V.
- Rated current: 2.5A (N channel), -1.5A (P channel).
- On-resistance: 130mΩ @ 4.5V (N channel), 230mΩ @ 4.5V (P channel), 160mΩ @ 2.5V (N channel), 280mΩ @ 2.5V (P channel).
- Gate-source voltage: 20Vgs (±V).
- Threshold voltage: ±0.6~2Vth (V).
- Package type: SC70-6.
.
Application introduction:.
Si1553CDL-T1-GE3 is a device integrating N and P channel MOSFETs, suitable for a variety of applications such as power management and power amplifiers. It has positive and negative rated voltage and rated current characteristics, and can provide reliable and efficient current switching functions. .
.
By controlling the gate-source voltage of 20Vgs (±V), the switch tube can be turned on and off, and the current can be controlled and the switching state can be converted. Its low on-resistance can reduce power consumption and improve the efficiency of the system. .
.
Si1553CDL-T1-GE3 adopts SC70-6 package, which is suitable for use in various circuit boards and modules. .
.
This device is widely used in power switches, power inverters, motor drivers and other fields. Due to its positive and negative rated voltage and rated current characteristics, Si1553CDL-T1-GE3 is particularly suitable for circuit applications that require simultaneous control of positive and negative voltages. In these fields, it can provide reliable power switch control and current transmission. .
.
In short, Si1553CDL-T1-GE3 is a device with integrated N and P channel MOSFETs, suitable for a variety of application modules such as power management and power amplifiers. It is particularly suitable for areas where positive and negative voltages need to be controlled simultaneously, such as power switches, motor drivers, etc.