**VBsemi NTZD5110NT1G-VB product detailed parameter description: **.
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- **Silk screen logo: ** VBTA3615M.
- **Brand: ** VBsemi.
- **Package :** SC75-6.
- **Channel type:** 2 N-Channel channels.
- **Drain-source voltage (V_DS): ** 60V.
- **Drain-source current (I_D): ** 0.2A.
- **On-resistance (R_{DS(ON )}): ** 1200mΩ @ V_GS=10V, 1200mΩ @ V_GS=20V.
- **Threshold voltage (V _th): ** 0.4V.
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**Application introduction: **.
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VBsemi NTZD5110NT1G-VB is an N-Channel groove in SC75-6 package Field effect transistors (MOSFETs) for low power switching power supplies and signal amplification applications. .
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**Main application fields and modules:**.
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1. **Low power switch module:** Suitable for low power DC-DC (DC-DC) conversion controller, low-power power switch control, etc. .
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2. **Signal amplification module:** Due to its N-Channel design, it can be used in signal amplification module. .
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**Function:**.
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- Provide low power switch control function. .
- Plays a role in signal amplification circuit. .
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**Precautions for use:**.
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1. **Voltage level:** Use within the specified voltage range and do not exceed the nominal maximum drain of the product -Source voltage. .
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2. **Current load:** Note that the current load does not exceed the rated current of the product. .
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3. **Operating temperature:** Use within the specified operating temperature range to avoid over-temperature operation. .
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The above information is for reference only. When using it, please read the product manual and specifications carefully to ensure correct use and follow the manufacturer's recommendations and precautions.