NTS2101PT1G detailed parameter description:.
- Polarity: P-channel.
- Rated voltage: -20V.
- Rated current: -3A.
- On-resistance: 98mΩ @ 4.5V, 117.6mΩ @ 2.5V.
- Gate-source voltage: 12Vgs (±V).
- Threshold voltage: -0.6~-2Vth (V).
- Package type: SC70-3.
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Application introduction:.
NTS2101PT1G is a P-channel MOSFET suitable for various power management and power amplifier applications. It has negative rated voltage and rated current characteristics, and can provide reliable and efficient current switching functions. .
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By controlling the gate-source voltage of 12Vgs (±V), the switch tube can be turned on and off, and the current can be controlled and the switch state can be converted. Its lower on-resistance can reduce power consumption and improve system efficiency. .
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NTS2101PT1G adopts SC70-3 package and is suitable for use in various circuit boards and modules. .
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This device is widely used in power switches, power inverters, motor drivers and other fields. Due to its negative rated voltage and rated current characteristics, NTS2101PT1G is particularly suitable for circuit applications that require control and switching of negative voltages. In these fields, it can provide reliable power switch control and current transmission of negative voltages. .
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In short, NTS2101PT1G is a P-channel MOSFET suitable for various application modules of power management and power amplifiers, especially for fields that require control and switching of negative voltages, such as power switches, motor drivers, etc.