Model: NTGS3443T1G-VB.
Silk screen: VB8338.
Brand: VBsemi.
Parameters:.
- P channel.
- Rated voltage: -30V.
- Maximum current ：-4.8A.
- On-state resistance (RDS(ON)): 49mΩ @ 10V, 54mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage (Vth): -1~-3V.
- Package: SOT23-6.
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Application Introduction: .
NTGS3443T1G-VB is a P-channel MOSFET suitable for low voltage and medium current applications with low on-state resistance and moderate voltage and current characteristics. This MOSFET is suitable for applications requiring efficient energy switching and control. .
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Main features and application fields: .
1. **Power switch**: NTGS3443T1G-VB can be used in power switching applications, such as switching power supplies, DC-DC converters and switching regulators . Its low on-state resistance and moderate voltage characteristics make it suitable for handling low-voltage power supplies. .
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2. **Battery Management**: In battery power supply systems, this MOSFET can be used for battery charge and discharge control, protection and balancing to ensure the safe operation of the battery pack. .
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3. **Current Control**: NTGS3443T1G-VB is suitable for current control applications, including current sources, current controllers and current amplifiers. It allows precise current regulation. .
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4. **Negative polarity power management**: In special applications where negative polarity power management is required, NTGS3443T1G-VB can be used to implement power switching and control. .
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5. **Current Switch**: This MOSFET can be used in current switching applications such as current limiting and protection circuits. .
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In short, NTGS3443T1G-VB is suitable for many fields, including power switch, battery management, current control, negative polarity power management and current switch modules. Its P-channel characteristics and low on-state resistance make it ideal for handling low voltage and medium current applications.