Model: NTGS3136PT1G-VB. Silk screen: VB8338. Brand: VBsemi. Parameters:. - P channel. - Maximum withstand voltage: -30V. - Max. Leakage current: -4.8A. - Static on-resistance (RDS(ON)): 49mΩ @ 10V, 54mΩ @ 4.5V, 20Vgs (±V). - Threshold voltage (Vth): -1V to -3V. - Package: SOT23-6. . Application Introduction: . NTGS3136PT1G-VB is a P-channel field effect transistor suitable for a variety of low-power electronic applications. It has low on-resistance and moderate withstand voltage characteristics, making it suitable for use in low-power devices and control circuits. . . Field module application: . 1. Low-power power module: NTGS3136PT1G-VB can be used for power management of low-power devices, such as portable electronic devices, sensor nodes, etc. . 2. Signal switch: suitable for switching signals and control circuits, such as signal switches, multiplexers and other applications. . 3. Low power consumption module: It can play a key role in modules that require lower power consumption, such as standby mode and battery-powered equipment. . . These characteristics make NTGS3136PT1G-VB widely used in the field of low-power electronics.
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